発表論文

  1. Y. Matsumoto, T. Hanajiri, T. Sugano, L. T. T. Tuyen, and T. Katoda, "Electrical and optical properties of phosphorous nitride films formed on InP substrates with photon-assisted chemical vapour deposition," Thin Solid Films, vol. 269, pp. 41-46, 1995.
  2. Y. Matsumoto, T. Hanajiri, T. Toyabe, and T. Sugano, "Single electron device with asymmetric tunnel barriers," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 35, pp. 1126-1131, Feb 1996.
  3. Y. Matsumoto, T. Hanajiri, T. Toyabe, and T. Sugano, "Advantages of the asymmetric tunnel barrier for high-density integration of single electron devices," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 36, pp. 4143-4146, Jun 1997.
  4. T. Hanajiri and T. Sugano, "Self-formation of ultra small structures on vicinal Si substrates for nano-device array," Journal of Crystal Growth, vol. 210, pp. 85-89, Mar 2000.
  5. T. Hanajiri, T. Toyabe, and T. Sugano, "Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs," Solid-State Electronics, vol. 45, pp. 2077-2081, Dec 2001.
  6. Y. Ochiai, N. Aoki, L.-H. Lin, A. Andresen, C. Prasad, F. Ge, J. Bird, nbsp, P, D. Ferry, nbsp, K, T. Risaki, K. Ishibashi, Y. Aoyagi, and T. Sugano, "Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays," Japanese Journal of Applied Physics, vol. 40, p. 1990.
  7. T. Risaki, T. Ida, K. Ishibashi, and T. Sugano, "Coupling effects on the conductance fluctuations in GaAs/AlGaAs double quantum dots," Microelectronic Engineering, vol. 60, pp. 347-355, Apr 2002.
  8. Y. Nakajima, H. Tomita, K. Aoto, N. Ito, T. Hanajiri, T. Toyabe, T. Morikawa, and T. Sugano, "Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs," Japanese Journal of Applied Physics, vol. 42, p. 2004.
  9. Y. Nakajima, K. Sasaki, T. Hanajiri, T. Toyabe, T. Morikawa, and T. Sugano, "Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation," Physica E: Low-dimensional Systems and Nanostructures, vol. 24, pp. 92-95, 2004.
  10. T. Hanajiri, K. Aoto, T. Hoshino, M. Niizato, Y. Nakajima, T. Toyabe, T. Morikawa, T. Sugano, and Y. Akagi, "An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region," Computational Materials Science, vol. 30, pp. 235-241, 2004.
  11. T. Hanajiri, M. Niizato, K. Aoto, T. Toyabe, Y. Nakajima, T. Morikawa, and T. Sugano, "Scaling rules for SOI MOSFETs operating in the fully inverted mode," Solid-State Electronics, vol. 48, pp. 1943-1946, Oct-Nov 2004.
  12. Y. Nakajima, H. Tomita, K. Aoto, K. Sasaki, T. Hanajiri, T. Toyabe, T. Morikawa, and T. Sugano, "A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs (vol 6, pg 462, 2004)," Thin Solid Films, vol. 488, pp. 337-339, Sep 22 2005.
  13. A. Aki, Y. Nihei, H. Asai, T. Ukai, H. Morimoto, Y. Nakajima, T. Hanajiri, and T. Maekawa, "Detection of surface immunoreactions on individual cells by electrophoretic mobility measurement in a micro-channel," Sensors and Actuators B-Chemical, vol. 131, pp. 285-289, Apr 14 2008.
  14. S. Nishiyama, M. Tajima, Y. Nakajima, T. Hanajiri, and Y. Yoshida, "Ultraviolet irradiation effects on and depth profiles in X-ray photoelectron spectra of poly(vinylpyridine) thin films," Japanese Journal of Applied Physics, vol. 47, pp. 432-437, Jan 2008.
  15. K. Kajiwara, Y. Nakajima, T. Hanajiri, T. Toyabe, and T. Sugano, "Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs," Electron Devices, IEEE Transactions on, vol. 55, pp. 1702-1707, 2008.
  16. N. Urushihara, S. Iida, N. Sanada, M. Suzuki, D. F. Paul, S. Bryan, Y. Nakajima, T. Hanajiri, K. Kakushima, P. Ahmet, K. Tsutsui, and H. Iwai, "Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy," Journal of Vacuum Science & Technology A, vol. 26, pp. 668-672, 2008.
  17. Y. Nakajima, K. Sasaki, T. Hanajiri, T. Toyabe, and T. Sugano, "Drive current enhancement in silicon-on-quartz MOSFETs," Ieee Electron Device Letters, vol. 29, pp. 944-945, Aug 2008.
  18. A. Aki, O. Ito, H. Morimoto, Y. Nagaoka, Y. Nakajima, T. Mizuki, T. Hanajiri, R. Usami, and T. Maekawa, "Capture of nonmagnetic particles and living cells using a microelectromagnetic system," Journal of Applied Physics, vol. 104, pp. -, 2008.
  19. Y. Nakajima, T. Toda, T. Hanajiri, T. Toyabe, and T. Sugano, "In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers," Journal of Applied Physics, vol. 108, pp. -, 2010.
  20. T. Higashi, Y. Nakajima, M. Kojima, K. Ishii, A. Inoue, T. Maekawa, and T. Hanajiri, "Effects of poly-L-tyrosine molecules decoration on the surface properties and electron transport of SWCNTs compared to the effects of DNA molecules," Chemical Physics Letters, vol. 501, pp. 451-454, Jan 7 2011.
  21. N. Takahashi, A. Aki, T. Ukai, Y. Nakajima, T. Maekawa, and T. Hanajiri, "Proposal and experimental validation of the electrophoretic Coulter method for analyzing microparticles and biological cells," Sensors and Actuators B-Chemical, vol. 151, pp. 410-415, Jan 28 2011.
  22. Y. Nakajima, Y. Watanabe, T. Hanajiri, T. Toyabe, and T. Sugano, "Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces," Ieee Electron Device Letters, vol. 32, pp. 237-239, Mar 2011.
  23. T. Higashi, Y. Nagaoka, H. Minegishi, A. Echigo, R. Usami, T. Maekawa, and T. Hanajiri, "Regulation of PCR efficiency with magnetic nanoparticles in a rotating magnetic field," Chemical Physics Letters, vol. 506, pp. 239-242, Apr 20 2011.
  24. T. Higashi, H. Minegishi, Y. Nagaoka, T. Fukuda, A. Echigo, R. Usami, T. Maekawa, and T. Hanajiri, "Effects of Superparamagnetic Nanoparticle Clusters on the Polymerase Chain Reaction," Applied Sciences, vol. 2, pp. 303-314, 2012.
  25. T. Yamada, Y. Nakajima, T. Hanajiri, and T. Sugano, “Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications,” IEEE Trans. Electron Devices, vol. 60, no. 1, pp. 260–267, Jan. 2013.
  26. T. Yamada, S. Abe, Y. Nakajima, T. Hanajiri, T. Toyabe, and T. Sugano, “Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of its Effects on MOSFET Characteristics,” IEEE Trans. Electron Devices, vol. 60, no. 12, pp. 3996 – 4001, 2013.
  27. T. Yamada, Y. Nakajima, T. Hanajiri, T. Toyabe, and T. Sugano, “Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism,” J. Comput. Electron., pp. 1–8, Dec. 2013.