- Y. Matsumoto, T. Hanajiri, T. Sugano, L. T. T. Tuyen, and T. Katoda, "Electrical and optical properties of phosphorous nitride films formed on InP substrates with photon-assisted chemical vapour deposition," Thin Solid Films, vol. 269, pp. 41-46, 1995.
- Y. Matsumoto, T. Hanajiri, T. Toyabe, and T. Sugano, "Single electron device with asymmetric tunnel barriers," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 35, pp. 1126-1131, Feb 1996.
- Y. Matsumoto, T. Hanajiri, T. Toyabe, and T. Sugano, "Advantages of the asymmetric tunnel barrier for high-density integration of single electron devices," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 36, pp. 4143-4146, Jun 1997.
- T. Hanajiri and T. Sugano, "Self-formation of ultra small structures on vicinal Si substrates for nano-device array," Journal of Crystal Growth, vol. 210, pp. 85-89, Mar 2000.
- T. Hanajiri, T. Toyabe, and T. Sugano, "Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs," Solid-State Electronics, vol. 45, pp. 2077-2081, Dec 2001.
- Y. Ochiai, N. Aoki, L.-H. Lin, A. Andresen, C. Prasad, F. Ge, J. Bird, nbsp, P, D. Ferry, nbsp, K, T. Risaki, K. Ishibashi, Y. Aoyagi, and T. Sugano, "Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays," Japanese Journal of Applied Physics, vol. 40, p. 1990.
- T. Risaki, T. Ida, K. Ishibashi, and T. Sugano, "Coupling effects on the conductance fluctuations in GaAs/AlGaAs double quantum dots," Microelectronic Engineering, vol. 60, pp. 347-355, Apr 2002.
- Y. Nakajima, H. Tomita, K. Aoto, N. Ito, T. Hanajiri, T. Toyabe, T. Morikawa, and T. Sugano, "Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs," Japanese Journal of Applied Physics, vol. 42, p. 2004.
- Y. Nakajima, K. Sasaki, T. Hanajiri, T. Toyabe, T. Morikawa, and T. Sugano, "Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation," Physica E: Low-dimensional Systems and Nanostructures, vol. 24, pp. 92-95, 2004.
- T. Hanajiri, K. Aoto, T. Hoshino, M. Niizato, Y. Nakajima, T. Toyabe, T. Morikawa, T. Sugano, and Y. Akagi, "An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region," Computational Materials Science, vol. 30, pp. 235-241, 2004.
- T. Hanajiri, M. Niizato, K. Aoto, T. Toyabe, Y. Nakajima, T. Morikawa, and T. Sugano, "Scaling rules for SOI MOSFETs operating in the fully inverted mode," Solid-State Electronics, vol. 48, pp. 1943-1946, Oct-Nov 2004.
- Y. Nakajima, H. Tomita, K. Aoto, K. Sasaki, T. Hanajiri, T. Toyabe, T. Morikawa, and T. Sugano, "A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs (vol 6, pg 462, 2004)," Thin Solid Films, vol. 488, pp. 337-339, Sep 22 2005.
- A. Aki, Y. Nihei, H. Asai, T. Ukai, H. Morimoto, Y. Nakajima, T. Hanajiri, and T. Maekawa, "Detection of surface immunoreactions on individual cells by electrophoretic mobility measurement in a micro-channel," Sensors and Actuators B-Chemical, vol. 131, pp. 285-289, Apr 14 2008.
- S. Nishiyama, M. Tajima, Y. Nakajima, T. Hanajiri, and Y. Yoshida, "Ultraviolet irradiation effects on and depth profiles in X-ray photoelectron spectra of poly(vinylpyridine) thin films," Japanese Journal of Applied Physics, vol. 47, pp. 432-437, Jan 2008.
- K. Kajiwara, Y. Nakajima, T. Hanajiri, T. Toyabe, and T. Sugano, "Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs," Electron Devices, IEEE Transactions on, vol. 55, pp. 1702-1707, 2008.
- N. Urushihara, S. Iida, N. Sanada, M. Suzuki, D. F. Paul, S. Bryan, Y. Nakajima, T. Hanajiri, K. Kakushima, P. Ahmet, K. Tsutsui, and H. Iwai, "Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy," Journal of Vacuum Science & Technology A, vol. 26, pp. 668-672, 2008.
- Y. Nakajima, K. Sasaki, T. Hanajiri, T. Toyabe, and T. Sugano, "Drive current enhancement in silicon-on-quartz MOSFETs," Ieee Electron Device Letters, vol. 29, pp. 944-945, Aug 2008.
- A. Aki, O. Ito, H. Morimoto, Y. Nagaoka, Y. Nakajima, T. Mizuki, T. Hanajiri, R. Usami, and T. Maekawa, "Capture of nonmagnetic particles and living cells using a microelectromagnetic system," Journal of Applied Physics, vol. 104, pp. -, 2008.
- Y. Nakajima, T. Toda, T. Hanajiri, T. Toyabe, and T. Sugano, "In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers," Journal of Applied Physics, vol. 108, pp. -, 2010.
- T. Higashi, Y. Nakajima, M. Kojima, K. Ishii, A. Inoue, T. Maekawa, and T. Hanajiri, "Effects of poly-L-tyrosine molecules decoration on the surface properties and electron transport of SWCNTs compared to the effects of DNA molecules," Chemical Physics Letters, vol. 501, pp. 451-454, Jan 7 2011.
- N. Takahashi, A. Aki, T. Ukai, Y. Nakajima, T. Maekawa, and T. Hanajiri, "Proposal and experimental validation of the electrophoretic Coulter method for analyzing microparticles and biological cells," Sensors and Actuators B-Chemical, vol. 151, pp. 410-415, Jan 28 2011.
- Y. Nakajima, Y. Watanabe, T. Hanajiri, T. Toyabe, and T. Sugano, "Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces," Ieee Electron Device Letters, vol. 32, pp. 237-239, Mar 2011.
- T. Higashi, Y. Nagaoka, H. Minegishi, A. Echigo, R. Usami, T. Maekawa, and T. Hanajiri, "Regulation of PCR efficiency with magnetic nanoparticles in a rotating magnetic field," Chemical Physics Letters, vol. 506, pp. 239-242, Apr 20 2011.
- T. Higashi, H. Minegishi, Y. Nagaoka, T. Fukuda, A. Echigo, R. Usami, T. Maekawa, and T. Hanajiri, "Effects of Superparamagnetic Nanoparticle Clusters on the Polymerase Chain Reaction," Applied Sciences, vol. 2, pp. 303-314, 2012.
- T. Yamada, Y. Nakajima, T. Hanajiri, and T. Sugano, “Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications,” IEEE Trans. Electron Devices, vol. 60, no. 1, pp. 260–267, Jan. 2013.
- T. Yamada, S. Abe, Y. Nakajima, T. Hanajiri, T. Toyabe, and T. Sugano, “Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of its Effects on MOSFET Characteristics,” IEEE Trans. Electron Devices, vol. 60, no. 12, pp. 3996 – 4001, 2013.
- T. Yamada, Y. Nakajima, T. Hanajiri, T. Toyabe, and T. Sugano, “Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism,” J. Comput. Electron., pp. 1–8, Dec. 2013.